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amplifier transistors maximum ratings rating symbol npn pnp unit collectoremitter voltage mps6521 mps6523 v ceo 25 e e 25 vdc collectorbase voltage mps6521 mps6523 v cbo 40 e e 25 vdc emitterbase voltage v ebo 4.0 vdc collector current e continuous i c 100 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient (printed circuit board mounting) r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 0.5 madc, i b = 0) v (br)ceo 25 e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 4.0 e vdc collector cutoff current (v cb = 30 vdc, i e = 0) mps6521 (v cb = 20 vdc, i e = 0) mps6523 i cbo e e 0.05 0.05 adc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 november, 2001 rev. 2 1 publication order number: mps6521/d npn mps6521 pnp mps6523 *on semiconductor preferred device case 2911, style 1 to92 (to226aa) 1 2 3 * voltage and current are negative for pnp transistors collector 3 2 base 1 emitter collector 3 2 base 1 emitter
npn mps6521 pnp mps6523 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 100 adc, v ce = 10 vdc) mps6521 (i c = 2.0 madc, v ce = 10 vdc) mps6521 (i c = 100 adc, v ce = 10 vdc) mps6523 (i c = 2.0 madc, v ce = 10 vdc) mps6523 h fe 150 300 150 300 e 600 e 600 e collectoremitter saturation voltage (i c = 50 madc, i b = 5.0 madc) v ce(sat) e 0.5 vdc smallsignal characteristics output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo e 3.5 pf noise figure (i c = 10 adc, v ce = 5.0 vdc, r s = 10 k w , power bandwidth = 15.7 khz, 3.0 db points @ 10 hz and 10 khz) nf e 3.0 db
npn mps6521 pnp mps6523 http://onsemi.com 3 figure 1. turnon time figure 2. turnoff time npn mps6521 equivalent switching time test circuits *total shunt capacitance of test jig and connectors 10 k +3.0 v 275 c s < 4.0 pf* 10 k +3.0 v 275 c s < 4.0 pf* 1n916 300 ns duty cycle = 2% +10.9 v -0.5 v <1.0 ns 10 < t 1 < 500 m s duty cycle = 2% +10.9 v 0 -9.1 v <1.0 ns t 1 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 3. noise voltage f, frequency (hz) 5.0 7.0 10 20 3.0 figure 4. noise current f, frequency (hz) 2.0 10 20 50 100 200 500 1k 2k 5k 10k 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 bandwidth = 1.0 hz r s = 0 i c = 1.0 ma 100 m a e n , noise voltage (nv) i n , noise current (pa) 30 m a bandwidth = 1.0 hz r s ? 10 m a 300 m a i c = 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1k 2k 5k 10k
npn mps6521 pnp mps6523 http://onsemi.com 4 npn mps6521 noise figure contours (v ce = 5.0 vdc, t a = 25 c) figure 5. narrow band, 100 hz i c , collector current ( m a) 500k figure 6. narrow band, 1.0 khz i c , collector current ( m a) 10 2.0 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 7. wideband i c , collector current ( m a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the transistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman's constant (1.38 x 10 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 3.0 db 4.0 db 6.0 db 10 db 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k 10 20 30 50 70 100 200 300 500 700 1k 500k 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 1m 500k 50 100 200 500 1k 10k 5k 20k 50k 100k 200k 2k 20 30 50 70 100 200 300 500 700 1k bandwidth = 1.0 hz 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db 1.0 db 2.0 db 3.0 db 5.0 db 8.0 db
npn mps6521 pnp mps6523 http://onsemi.com 5 npn mps6521 typical static characteristics figure 8. dc current gain i c , collector current (ma) 400 0.004 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 9. collector saturation region i c , collector current (ma) 1.4 figure 10. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 11. aono voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t j = 25 c i c = 1.0 ma 10 ma 100 ma figure 12. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 m s duty cycle 2.0% i b = 500 m a 400 m a 300 m a 200 m a 100 m a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 -2.4 0.8 0 -1.6 -0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c) q
npn mps6521 pnp mps6523 http://onsemi.com 6 npn mps6521 typical dynamic characteristics c, capacitance (pf) figure 13. turnon time i c , collector current (ma) 300 figure 14. turnoff time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 15. currentgain e bandwidth product i c , collector current (ma) figure 16. capacitance v r , reverse voltage (volts) figure 17. input impedance i c , collector current (ma) figure 18. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) w 3.0 5.0 7.0 10 20 30 50 70 100 200 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 vdc t r 10 20 30 50 70 100 200 300 500 700 2.0 5.0 10 20 30 50 3.0 1.0 7.0 70 100 v cc = 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c f = 100 mhz v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 t j = 25 c f = 1.0 mhz c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 h fe 200 @ i c = 1.0 ma v ce = 10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c h fe 200 @ i c = 1.0 ma
npn mps6521 pnp mps6523 http://onsemi.com 7 npn mps6521 figure 19. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569) z ja(t) = r(t) r ja t j(pk) t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 20 figure 21. t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 22. v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 20. using the model and the de- vice thermal response the normalized effective transient ther- mal resistance of figure 19 was calculated for various duty cycles. to find z q ja(t) , multiply the value obtained from figure 19 by the steady state value r q ja . example: the mps6521 is dissipating 2.0 watts peak under the follow- ing conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 19 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore d t = r(t) x p (pk) x r q ja = 0.22 x 2.0 x 200 = 88 c. for more information, see on semiconductor application note an569/d, available from the literature distribution center or on our website at www.onsemi.com . the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 22 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 19. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 v cc = 30 vdc i ceo i cbo and i cex @ v be(off) = 3.0 vdc t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 m s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 m s
npn mps6521 pnp mps6523 http://onsemi.com 8 pnp mps6523 typical noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 23. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 24. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 bandwidth = 1.0 hz r s 0 i c = 10 m a 100 m a e n , noise voltage (nv) i n , noise current (pa) 30 m a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 m a noise figure contours (v ce = 5.0 vdc, t a = 25 c) 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 25. narrow band, 100 hz i c , collector current ( m a) figure 26. narrow band, 1.0 khz i c , collector current ( m a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 27. wideband i c , collector current ( m a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the transistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman's constant (1.38 x 10 23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db
npn mps6521 pnp mps6523 http://onsemi.com 9 pnp mps6523 typical static characteristics figure 28. dc current gain i c , collector current (ma) 400 0.003 h , dc current gain fe t j = 125 c -55 c 25 c v ce = 1.0 v v ce = 10 v figure 29. collector saturation region i c , collector current (ma) 1.4 figure 30. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 31. aono voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t a = 25 c i c = 1.0 ma 10 ma 100 ma figure 32. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 m s duty cycle 2.0% i b = 400 m a 350 m a 300 m a 250 m a 200 m a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 40 60 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 200 100 80 v , temperature coefficients (mv/ c) q 150 m a 100 m a 50 m a
npn mps6521 pnp mps6523 http://onsemi.com 10 pnp mps6523 typical dynamic characteristics c, capacitance (pf) figure 33. turnon time i c , collector current (ma) 500 figure 34. turnoff time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 35. currentgain e bandwidth product i c , collector current (ma) figure 36. capacitance v r , reverse voltage (volts) figure 37. input impedance i c , collector current (ma) figure 38. output admittance i c , collector current (ma) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t h , output admittance ( mhos) oe h ie , input impedance (k ) w 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob 2.0 5.0 10 20 50 1.0 0.2 100 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.2 0.5 mps6523 h fe 100 @ i c = -1.0 ma v ce = -10 vdc f = 1.0 khz t a = 25 c 2.0 5.0 10 20 50 1.0 2.0 100 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.5 v ce = 10 vdc f = 1.0 khz t a = 25 c 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -100 t j = 25 c mps6521 h fe 200 @ i c = -1.0 ma mps6523 h fe 100 @ i c = 1.0 ma mps6521 h fe 200 @ i c = 1.0 ma
npn mps6521 pnp mps6523 http://onsemi.com 11 pnp mps6523 figure 39. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569) z ja(t) = r(t) r ja t j(pk) t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 40 figure 41. t j , junction temperature ( c) 10 4 -40 i c , collector current (na) figure 42. v ce , collector-emitter voltage (volts) 400 2.0 i c , collector current (ma) design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 40. using the model and the de- vice thermal response the normalized effective transient ther- mal resistance of figure 39 was calculated for various duty cycles. to find z q ja(t) , multiply the value obtained from figure 39 by the steady state value r q ja . example: the mps6523 is dissipating 2.0 watts peak under the follow- ing conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (d = 0.2) using figure 39 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore d t = r(t) x p (pk) x r q ja = 0.22 x 2.0 x 200 = 88 c. for more information, see on semiconductor application note an569/d, available from the literature distribution center or on our website at www.onsemi.com . the safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 42 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 39. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 -2 10 -1 10 0 10 1 10 2 10 3 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 v cc = 30 vdc i ceo i cbo and i cex @ v be(off) = 3.0 vdc t a = 25 c current limit thermal limit second breakdown limit 1.0 ms 10 m s t c = 25 c 1.0 s dc dc 4.0 6.0 10 20 40 60 100 200 4.0 6.0 8.0 10 20 40 t j = 150 c 100 m s
npn mps6521 pnp mps6523 http://onsemi.com 12 package dimensions case 02911 (to226aa) issue ad c r n n 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p l f b k g h xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.021 0.457 0.533 f 0.016 0.019 0.407 0.482 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- style 1: pin 1. emitter 2. base 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps6521/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada

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